Publication:

Capacitor-less, Long-Retention (> 400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

Date

2020
Proceedings Paper
https://doi.org/10.1109/IEDM13553.2020.9371900
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dc.contributor.authorBelmonte, Attilio
dc.contributor.authorOh, Hyungrock
dc.contributor.authorRassoul, Nouredine
dc.contributor.authorDonadio, Gabriele Luca
dc.contributor.authorMitard, Jerome
dc.contributor.authorDekkers, Harold
dc.contributor.authorDelhougne, Romain
dc.contributor.authorSubhechha, Subhali
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorvan Setten, Michiel
dc.contributor.authorKljucar, Luka
dc.contributor.authorMao, Ming
dc.contributor.authorPuliyalil, Harinarayanan
dc.contributor.authorPak, Murat
dc.contributor.authorTeugels, Lieve
dc.contributor.authorTsvetanova, Diana
dc.contributor.authorBanerjee, Kaustuv
dc.contributor.authorSouriau, Laurent
dc.contributor.authorTokei, Zsolt
dc.contributor.authorGoux, Ludovic
dc.contributor.imecauthorBelmonte, A.
dc.contributor.imecauthorOh, H.
dc.contributor.imecauthorRassoul, N.
dc.contributor.imecauthorDonadio, G. L.
dc.contributor.imecauthorMitard, J.
dc.contributor.imecauthorDekkers, H.
dc.contributor.imecauthorDelhougne, R.
dc.contributor.imecauthorSubhechha, S.
dc.contributor.imecauthorChasin, A.
dc.contributor.imecauthorvan Setten, M. J.
dc.contributor.imecauthorKljucar, L.
dc.contributor.imecauthorMao, M.
dc.contributor.imecauthorPuliyalil, H.
dc.contributor.imecauthorPak, M.
dc.contributor.imecauthorTeugels, L.
dc.contributor.imecauthorTsvetanova, D.
dc.contributor.imecauthorBanerjee, K.
dc.contributor.imecauthorSouriau, L.
dc.contributor.imecauthorTokei, Z.
dc.contributor.imecauthorGoux, L.
dc.contributor.orcidimecOh, Hyungrock::0000-0001-5244-5755
dc.contributor.orcidimecRassoul, Nouredine::0000-0001-9489-3396
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecvan Setten, Michiel::0000-0003-0557-5260
dc.contributor.orcidimecPuliyalil, Harinarayanan::0000-0002-9749-5307
dc.contributor.orcidimecTeugels, Lieve::0000-0002-6613-9414
dc.contributor.orcidimecTsvetanova, Diana::0000-0002-5632-5539
dc.contributor.orcidimecBanerjee, Kaustuv::0000-0001-8003-6211
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-12-16T13:20:29Z
dc.date.available2021-12-06T02:06:19Z
dc.date.available2021-12-16T13:20:29Z
dc.date.issued2020
dc.identifier.doi10.1109/IEDM13553.2020.9371900
dc.identifier.eisbn978-1-7281-8888-1
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38546
dc.publisherIEEE
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 12-18, 2020
dc.source.conferencelocationSan Francisco, CA, USA
dc.source.journalna
dc.source.numberofpages4
dc.title

Capacitor-less, Long-Retention (> 400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

dc.typeProceedings paper
dspace.entity.typePublication
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