Publication:

Heterogeneous integration of O-band GaAs QD-on-SiN Fabry-Perot laser with observed mode-locking

Date

2025
Proceedings Paper
https://doi.org/10.1117/12.3043001
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dc.contributor.authorWang, Dongbo
dc.contributor.authorTran Thi Ngoc Lam
dc.contributor.authorPoelman, Stijn
dc.contributor.authorReep, Tom
dc.contributor.authorZhang, Jing
dc.contributor.authorRoelkens, Gunther
dc.contributor.authorKuyken, Bart
dc.contributor.imecauthorWang, Dongbo
dc.contributor.imecauthorLam Thi Ngoc Tran
dc.contributor.imecauthorPoelman, Stijn
dc.contributor.imecauthorReep, Tom
dc.contributor.imecauthorZhang, Jing
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.imecauthorKuyken, Bart
dc.contributor.orcidimecWang, Dongbo::0000-0003-1055-0252
dc.contributor.orcidimecPoelman, Stijn::0000-0002-8374-1466
dc.contributor.orcidimecReep, Tom::0000-0002-5223-5480
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.contributor.orcidimecKuyken, Bart::0000-0002-8745-7833
dc.date.accessioned2025-05-25T05:33:59Z
dc.date.available2025-05-25T05:33:59Z
dc.date.issued2025
dc.description.abstractWe demonstrate an O-band Fabry-Pérot laser through the heterogeneous integration of a GaAs-based quantum dot optical amplifier onto a passive silicon nitride cavity using micro-transfer printing. The laser shows an ultra-low threshold current of 20mA at 18°C and can deliver nearly 0.4mW of single-side waveguide-coupled power. The spectral peak can be tuned from 1296nm to 1334nm as the temperature increases from 10°C to 50°C. Mode-locking is achieved with an injection current of 80mA and a saturable absorption voltage of -0.6V, generating a clear RF beat note at 28.6GHz with a signal-to-noise ratio of 20dB.
dc.description.wosFundingTextThe authors acknowledge the European Innovation Council for funding the CSOC project under Grant No. 101047289. This work is also supported by the European Union's Horizon 2020 research and innovation programs through CALADAN project under Grant No. 825453.
dc.identifier.doi10.1117/12.3043001
dc.identifier.eisbn978-1-5106-8491-1
dc.identifier.isbn978-1-5106-8490-4
dc.identifier.issn0277-786X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45711
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING
dc.source.beginpage133710H-1
dc.source.conference2025 Conference on Silicon Photonics
dc.source.conferencedate2025-03-20
dc.source.conferencelocationSan Francisco
dc.source.endpage133710H-5
dc.source.numberofpages5
dc.subject.keywordsSILICON-NITRIDE
dc.title

Heterogeneous integration of O-band GaAs QD-on-SiN Fabry-Perot laser with observed mode-locking

dc.typeProceedings paper
dspace.entity.typePublication
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