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Growth techniques for high breakdown voltage in GaN/AlGaN HEMT on 200 mm Si (111) substrate by MOVPE

Date

2014
Meeting abstract
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dc.contributor.authorLiang, Hu
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorKang, Xuanwu
dc.contributor.authorVrancken, Evi
dc.contributor.authorZhao, Ming
dc.contributor.authorKandaswamy, Prem Kumar
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorLanger, Robert
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorVrancken, Evi
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorLanger, Robert
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.date.accessioned2021-10-22T03:04:48Z
dc.date.available2021-10-22T03:04:48Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24139
dc.source.beginpageMon-Oral-1-1
dc.source.conference17th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XVII
dc.source.conferencedate13/07/2014
dc.source.conferencelocationLausanne Switzerland
dc.title

Growth techniques for high breakdown voltage in GaN/AlGaN HEMT on 200 mm Si (111) substrate by MOVPE

dc.typeMeeting abstract
dspace.entity.typePublication
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