Publication:

Lattice defects in Si1-xGex epitaxial diodes induced by 20-MeV alpha rays

Date

1997
Proceedings Paper
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dc.contributor.authorOhyama, Hidenori
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorTakami, Y.
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorSunaga, H.
dc.contributor.authorPoortmans, Jef
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-09-30T09:22:53Z
dc.date.available2021-09-30T09:22:53Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2073
dc.source.beginpage121
dc.source.conferenceDefects in Semiconductors 19 - ICDS 19
dc.source.conferencedate21/07/1997
dc.source.conferencelocationAveiro Portugal
dc.source.endpage126
dc.title

Lattice defects in Si1-xGex epitaxial diodes induced by 20-MeV alpha rays

dc.typeProceedings paper
dspace.entity.typePublication
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