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Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization
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Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization
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Date
2009
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ragnarsson, Lars-Ake
;
Li, Zilan
;
Tseng, Joshua
;
Schram, Tom
;
Rohr, Erika
;
Cho, Moon Ju
;
Kauerauf, Thomas
;
Conard, Thierry
;
Okuno, Y.
;
Parvais, Bertrand
;
Absil, Philippe
;
Biesemans, Serge
;
Hoffmann, Thomas Y.
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Acq. date: 2025-12-09
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Views
2000
since deposited on 2021-10-18
1
last month
1
last week
Acq. date: 2025-12-09
Citations