Publication:

Thermal Modelling of GaN & InP RF Devices with Intrinsic Account for Nanoscale Transport Effects

Date

2022
Proceedings Paper
https://doi.org/10.1109/IEDM45625.2022.10019370
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dc.contributor.authorVermeersch, Bjorn
dc.contributor.authorRodriguez, Raul
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorVais, Abhitosh
dc.contributor.authorYadav, Sachin
dc.contributor.authorParvais, Bertrand
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorVermeersch, Bjorn
dc.contributor.imecauthorRodriguez, Raul
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorYadav, Sachin
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecVermeersch, Bjorn::0000-0001-8640-672X
dc.contributor.orcidimecRodriguez, Raul::0000-0002-4457-8942
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecYadav, Sachin::0000-0003-4530-2603
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2023-06-02T07:40:46Z
dc.date.available2023-05-25T20:20:01Z
dc.date.available2023-06-02T07:40:46Z
dc.date.issued2022
dc.identifier.doi10.1109/IEDM45625.2022.10019370
dc.identifier.eisbn978-1-6654-8959-1
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41623
dc.publisherIEEE
dc.source.conferenceInternational Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 03-07, 2022
dc.source.conferencelocationSan Francisco
dc.source.journalna
dc.source.numberofpages4
dc.title

Thermal Modelling of GaN & InP RF Devices with Intrinsic Account for Nanoscale Transport Effects

dc.typeProceedings paper
dspace.entity.typePublication
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