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Implant-free SiGe qqantum well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel.
Publication:
Implant-free SiGe qqantum well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel.
Date
2010
Proceedings Paper
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20984.pdf
978.71 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hellings, Geert
;
Witters, Liesbeth
;
Krom, Raymond
;
Mitard, Jerome
;
Hikavyy, Andriy
;
Loo, Roger
;
Schulze, Andreas
;
Eneman, Geert
;
Kerner, Christoph
;
Franco, Jacopo
;
Chiarella, Thomas
;
Takeoka, Shinji
;
Tseng, Joshua
;
Wang, Wei-E
;
Vandervorst, Wilfried
;
Absil, Philippe
;
Biesemans, Serge
;
Heyns, Marc
;
De Meyer, Kristin
;
Meuris, Marc
;
Hoffmann, Thomas Y.
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Abstract
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1875
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations
Metrics
Views
1875
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations