Publication:

Heterogeneous integration of InP-based type-II active devices on silicon for 2 μm wavelength range on-chip spectroscopy

Date

2016
Proceedings Paper
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dc.contributor.authorWang, Ruijun
dc.contributor.authorSprengel, Stephane
dc.contributor.authorMuneeb, Muhammed
dc.contributor.authorBoehm, Gerhard
dc.contributor.authorMailik, Aditya
dc.contributor.authorBaets, Roel
dc.contributor.authorAmann, Markus-Christian
dc.contributor.authorRoelkens, Gunther
dc.contributor.imecauthorBaets, Roel
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.orcidimecBaets, Roel::0000-0003-1266-1319
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.date.accessioned2021-10-23T17:03:28Z
dc.date.available2021-10-23T17:03:28Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27573
dc.source.beginpage35
dc.source.conference13th International Conference on Mid-Infrared Optoelectronics: Materials and Devices - MIOMD-XIII
dc.source.conferencedate18/09/2016
dc.source.conferencelocationBeijing China
dc.source.endpage36
dc.title

Heterogeneous integration of InP-based type-II active devices on silicon for 2 μm wavelength range on-chip spectroscopy

dc.typeProceedings paper
dspace.entity.typePublication
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