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Solid phase epitaxy of amorphous Ge films deposited by PECVD

Date

2011
Journal article
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dc.contributor.authorMa, Quanbao
dc.contributor.authorLieten, Ruben
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-19T15:49:55Z
dc.date.available2021-10-19T15:49:55Z
dc.date.issued2011
dc.identifier.issn0022-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19350
dc.source.beginpage40
dc.source.endpage43
dc.source.issue1
dc.source.journalJournal of Crystal Growth
dc.source.volume331
dc.title

Solid phase epitaxy of amorphous Ge films deposited by PECVD

dc.typeJournal article
dspace.entity.typePublication
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