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First demonstration of strained Ge-in-STI IFQW pFETs featuring raised SiGe75% S/D, replacement metal gate and germanided local interconnects

Date

2013
Proceedings Paper
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dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorVincent, Benjamin
dc.contributor.authorFranco, Jacopo
dc.contributor.authorFavia, Paola
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorEneman, Geert
dc.contributor.authorLoo, Roger
dc.contributor.authorBrunco, David
dc.contributor.authorKabir, Nafees
dc.contributor.authorBender, Hugo
dc.contributor.authorSebaai, Farid
dc.contributor.authorVos, Rita
dc.contributor.authorMertens, Paul
dc.contributor.authorMilenin, Alexey
dc.contributor.authorVecchio, Emma
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorMilenin, Alexey
dc.contributor.imecauthorVecchio, Emma
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMilenin, Alexey::0000-0003-0747-0462
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-21T10:07:17Z
dc.date.available2021-10-21T10:07:17Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22812
dc.source.beginpageT20
dc.source.conferenceVLSI Technology Symposium / VLSI Cricuits Symposium
dc.source.conferencedate10/06/2013
dc.source.conferencelocationKyoto Japan
dc.title

First demonstration of strained Ge-in-STI IFQW pFETs featuring raised SiGe75% S/D, replacement metal gate and germanided local interconnects

dc.typeProceedings paper
dspace.entity.typePublication
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