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ESD characterization of gate-all-around (GAA) Si nanowire devices
Publication:
ESD characterization of gate-all-around (GAA) Si nanowire devices
Date
2015
Proceedings Paper
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32080.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Chen, Shih-Hung
;
Hellings, Geert
;
Linten, Dimitri
;
Veloso, Anabela
;
Scholz, Mirko
;
Boschke, Roman
;
Groeseneken, Guido
;
Thean, Aaron
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Abstract
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1859
since deposited on 2021-10-22
Acq. date: 2025-10-24
Citations
Metrics
Views
1859
since deposited on 2021-10-22
Acq. date: 2025-10-24
Citations