Publication:

ESD characterization of gate-all-around (GAA) Si nanowire devices

Date

2015

Proceedings Paper

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Files

32080.pdf 2.41 MB

Author(s)

Chen, Shih-Hung

;

Hellings, Geert

;

Linten, Dimitri

;

Veloso, Anabela

;

;

;

Groeseneken, Guido

;

Statistics

1866 since deposited on 2021-10-22

Acq. date: 2026-09-11