A deep-level transient spectroscopy study of implanted Ge p+n and n+p junctions by Pt-induced crystallization

dc.contributor.author	Simoen, Eddy
dc.contributor.author	Lauwaert, J.
dc.contributor.author	Vrielinck, H.
dc.contributor.author	Ioannou-Sougleridis, V.
dc.contributor.author	dimoulas, A.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-19T18:53:42Z
dc.date.available	2021-10-19T18:53:42Z
dc.date.embargo	9999-12-31
dc.date.issued	2011
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/19789
dc.source.beginpage	299
dc.source.conference	ULSI Process Integration 7
dc.source.conferencedate	9/10/2011
dc.source.conferencelocation	Boston, MA USA
dc.source.endpage	308
dc.title	A deep-level transient spectroscopy study of implanted Ge p+n and n+p junctions by Pt-induced crystallization
dc.type	Proceedings paper
dspace.entity.type	Publication
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