Publication:

Epitaxial growth of (Si)GeSn source/drain layers for advanced gate all around devices

Date

2019-09
Meeting abstract
Simple item page Full metadata Statistics
 
dc.contributor.authorLoo, Roger
dc.contributor.authorVohra, Anurag
dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorSchaekers, Marc
dc.contributor.authorCapogreco, Elena
dc.contributor.authorShimura, Yosuke
dc.contributor.authorKohen, David
dc.contributor.authorTolle, John
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.accessioned2021-10-27T12:57:14Z
dc.date.available2021-10-27T12:57:14Z
dc.date.issued2019-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33474
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8818998
dc.source.beginpage1
dc.source.conference2019 Compound Semiconductor Week (CSW)
dc.source.conferencedate19/05/2019
dc.source.conferencelocationNara Japan
dc.source.endpage2
dc.title

Epitaxial growth of (Si)GeSn source/drain layers for advanced gate all around devices

dc.typeMeeting abstract
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions