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Novel metrology for mask degradation: IR-AFM, XPS depth profiling and HAXPES

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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0003-2211-9443
cris.virtualsource.department386aec34-c796-442e-8812-e827cd030994
cris.virtualsource.orcid386aec34-c796-442e-8812-e827cd030994
dc.contributor.authorde Rooij-Lohmann, Veronique
dc.contributor.authorMukherjee, Shriparna
dc.contributor.authorWu, Chien-Ching
dc.contributor.authorEbeling, Rob
dc.contributor.authorPandey, Komal
dc.contributor.authorvan Es, Maarten
dc.contributor.authorJonckheere, Rik
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.date.accessioned2025-08-29T03:57:11Z
dc.date.available2025-08-29T03:57:11Z
dc.date.issued2024
dc.description.wosFundingTextThe project is supported by Chips Joint Undertaking and its members, including the top-up funding of The Netherlands and Belgium. Ravi Prakash and Fatemeh Minaye Hashemi are acknowledged for their contributions to the XPS analysis, Tom Duivenvoorde for the AFM measurements, and Youyou Westland for the light microscopy.
dc.identifier.doi10.1117/12.3032757
dc.identifier.eisbn978-1-5106-8158-3
dc.identifier.isbn978-1-5106-8157-6
dc.identifier.issn0277-786X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/46126
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING
dc.source.beginpage132160Y
dc.source.conference2024 Conference on Photomask Technology
dc.source.conferencedate2024-09-29
dc.source.conferencelocationMonterey
dc.source.journalProceedings of SPIE
dc.source.numberofpages14
dc.title

Novel metrology for mask degradation: IR-AFM, XPS depth profiling and HAXPES

dc.typeProceedings paper
dspace.entity.typePublication
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