Publication:

Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates

Date

2017
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorGuo, Weiming
dc.contributor.authorMols, Yves
dc.contributor.authorBelz, Jürgen
dc.contributor.authorBeyer, Andreas
dc.contributor.authorVolz, Kerstin
dc.contributor.authorSchulze, Andreas
dc.contributor.authorLanger, Robert
dc.contributor.authorKunert, Bernardette
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.date.accessioned2021-10-24T05:17:51Z
dc.date.available2021-10-24T05:17:51Z
dc.date.issued2017
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28435
dc.identifier.urlhttp://aip.scitation.org/doi/10.1063/1.4991481
dc.source.beginpage25303
dc.source.issue2
dc.source.journalJournal of Applied Physics
dc.source.volume122
dc.title

Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles