Publication:

Electrical activity of threading dislocations and defect complexes in GeSn epitaxial layers

Date

2013
Proceedings Paper
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dc.contributor.authorGupta, Somya
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAsano, Takanori
dc.contributor.authorNakatsuka, Osamu
dc.contributor.authorGencarelli, Federica
dc.contributor.authorShimura, Yosuke
dc.contributor.authorMoussa, Alain
dc.contributor.authorLoo, Roger
dc.contributor.authorZaima, Shigeaki
dc.contributor.authorNguyen, Ngoc Duy
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-21T08:03:58Z
dc.date.available2021-10-21T08:03:58Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22443
dc.source.beginpage63
dc.source.conference8th International Conference on Silicon Epitaxy and Heterostructures - ICSI-8
dc.source.conferencedate2/06/2013
dc.source.conferencelocationFukuoka Japan
dc.source.endpage64
dc.title

Electrical activity of threading dislocations and defect complexes in GeSn epitaxial layers

dc.typeProceedings paper
dspace.entity.typePublication
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