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Nanoscale etching: dissolution of III-As and Ge in HCl/H2O2 solutions

Date

2015-10
Proceedings Paper
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dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorWeinberger, David
dc.contributor.authorVan wonterghem, S.
dc.contributor.authorArnauts, Sophia
dc.contributor.authorStrubbe, Katrien
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-23T00:01:46Z
dc.date.available2021-10-23T00:01:46Z
dc.date.embargo9999-12-31
dc.date.issued2015-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26054
dc.identifier.urlhttp://ecst.ecsdl.org/content/69/8/235.full.pdf+html
dc.source.beginpage235
dc.source.conferenceSemiconductor Cleaning Science and Technology 14 - SCST 14
dc.source.conferencedate11/10/2015
dc.source.conferencelocationPhoenix, AZ USA
dc.source.endpage242
dc.title

Nanoscale etching: dissolution of III-As and Ge in HCl/H2O2 solutions

dc.typeProceedings paper
dspace.entity.typePublication
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