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Zero-bias Si backward diodes detectors incorporating P and B delta-doping layers grown by chemical vapor deposition

Date

2009
Proceedings Paper
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dc.contributor.authorPark, Si-Young
dc.contributor.authorAnisha, R.
dc.contributor.authorJiang, Sheng
dc.contributor.authorBerger, Paul
dc.contributor.authorLoo, Roger
dc.contributor.authorNguyen, Duy
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorGoossens, Jozefien
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-18T01:29:35Z
dc.date.available2021-10-18T01:29:35Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15980
dc.source.conferenceInternational Semiconductor Device Research Symposium - ISDRS
dc.source.conferencedate9/12/2009
dc.source.conferencelocationCollege Park, MD USA
dc.title

Zero-bias Si backward diodes detectors incorporating P and B delta-doping layers grown by chemical vapor deposition

dc.typeProceedings paper
dspace.entity.typePublication
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