Publication:

Optical metrology of thickness and indium content of epitaxial InxGa1-xAs layers on Si substrates

Date

2012
Proceedings Paper
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dc.contributor.authorJin, Youseung
dc.contributor.authorWaldron, Niamh
dc.contributor.authorOrzali, Tommaso
dc.contributor.authorCaymax, Matty
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorPark, TaeHyun
dc.contributor.authorJiang, Zhiming
dc.contributor.authorHan, SangHyun
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-20T11:54:22Z
dc.date.available2021-10-20T11:54:22Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20869
dc.source.beginpage77
dc.source.conference23rd annual SEMI Advanced Semiconductor Manufacturing Conference - ASMC
dc.source.conferencedate15/05/2012
dc.source.conferencelocationSaratoga Springs, NY USA
dc.source.endpage81
dc.title

Optical metrology of thickness and indium content of epitaxial InxGa1-xAs layers on Si substrates

dc.typeProceedings paper
dspace.entity.typePublication
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