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Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-k/metal gate pMOSFET applications
Publication:
Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-k/metal gate pMOSFET applications
Date
2007
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Chang, Vincent
;
Ragnarsson, Lars-Ake
;
Yu, HongYu
;
Aoulaiche, Marc
;
Conard, Thierry
;
Yin, KaiMin
;
Schram, Tom
;
Maes, Jan Willem
;
De Gendt, Stefan
;
Biesemans, Serge
Journal
IEEE Trans. Electron Devices
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1905
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations
Metrics
Views
1905
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations