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Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

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dc.contributor.authorDe Gryse, O.
dc.contributor.authorClauws, P.
dc.contributor.authorVanhellemont, J.
dc.contributor.authorLebedev, O.
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-14T21:21:30Z
dc.date.available2021-10-14T21:21:30Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6188
dc.source.beginpage183
dc.source.conferenceHigh Purity Silicon VII
dc.source.conferencedate20/10/2002
dc.source.conferencelocationSalt Lake City, UT USA
dc.source.endpage194
dc.title

Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

dc.typeProceedings paper
dspace.entity.typePublication
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