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Self-limited filament formation and low-powerresistive switching in CuxTe1-x/Al2O3/Si CBRAM cell

Date

2011
Proceedings Paper
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dc.contributor.authorGoux, Ludovic
dc.contributor.authorOpsomer, Karl
dc.contributor.authorSchuitema, Rudy
dc.contributor.authorDegraeve, Robin
dc.contributor.authorMuller, Robert
dc.contributor.authorDetavernier, C.
dc.contributor.authorWouters, Dirk
dc.contributor.authorJurczak, Gosia
dc.contributor.authorAltimime, Laith
dc.contributor.authorKittl, Jorge
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-19T13:54:04Z
dc.date.available2021-10-19T13:54:04Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18992
dc.source.beginpage99
dc.source.conference3rd IEEE International Memory Workshop - IMW
dc.source.conferencedate22/05/2011
dc.source.conferencelocationMonterey, CA USA
dc.source.endpage102
dc.title

Self-limited filament formation and low-powerresistive switching in CuxTe1-x/Al2O3/Si CBRAM cell

dc.typeProceedings paper
dspace.entity.typePublication
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