Publication:

Thermal resistance characterization of GaN power HEMTs on Si, SOI, and poly-AlN substrates

Date

2020
Proceedings Paper
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dc.contributor.authorMagnani, Alessandro
dc.contributor.authorCosnier, Thibault
dc.contributor.authorAmirifar, Nooshin
dc.contributor.authorZhao, Ming
dc.contributor.authorLi, Xiangdong
dc.contributor.authorGeens, Karen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorMagnani, Alessandro
dc.contributor.imecauthorCosnier, Thibault
dc.contributor.imecauthorAmirifar, Nooshin
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecMagnani, Alessandro::0000-0001-6719-7467
dc.contributor.orcidimecCosnier, Thibault::0000-0001-7991-7222
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2022-01-27T11:29:17Z
dc.date.available2021-11-02T16:04:47Z
dc.date.available2022-01-27T11:29:17Z
dc.date.issued2020
dc.identifier.eisbn978-1-7281-6049-8
dc.identifier.issnna
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38164
dc.publisherIEEE
dc.source.conference21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
dc.source.conferencedateJUL 05-08, 2020
dc.source.conferencelocationCracow
dc.source.journalna
dc.source.numberofpages6
dc.subject.keywordsHALF-BRIDGE
dc.subject.keywordsCIRCUITS
dc.subject.keywordsDEVICES
dc.title

Thermal resistance characterization of GaN power HEMTs on Si, SOI, and poly-AlN substrates

dc.typeProceedings paper
dspace.entity.typePublication
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