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6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
Publication:
6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
Date
2010
Proceedings Paper
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Franco, Jacopo
;
Kaczer, Ben
;
Eneman, Geert
;
Mitard, Jerome
;
Stesmans, Andre
;
Afanasiev, Valeri
;
Kauerauf, Thomas
;
Roussel, Philippe
;
Toledano-Luque, Maria
;
Cho, Moon Ju
;
Degraeve, Robin
;
Grasser, Tibor
;
Ragnarsson, Lars-Ake
;
Witters, Liesbeth
;
Tseng, Joshua
;
Takeoka, Shinji
;
Wang, Wei-E
;
Hoffmann, Thomas Y.
;
Groeseneken, Guido
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1
since deposited on 2021-10-18
Acq. date: 2025-10-23
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2077
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations