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Impact of process conditions on interface and high-k trap density studied by variable Tcharge-Tdischarge charge pumping (VT2CP)
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Impact of process conditions on interface and high-k trap density studied by variable Tcharge-Tdischarge charge pumping (VT2CP)
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Date
2007-09
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zahid, Mohammed
;
Degraeve, Robin
;
Zhang, John
;
Groeseneken, Guido
Journal
Microelectronic Engineering
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1838
since deposited on 2021-10-16
Acq. date: 2026-01-06
Citations
Metrics
Views
1838
since deposited on 2021-10-16
Acq. date: 2026-01-06
Citations