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Fast VTH transients after the program/erase of flash memory stacks with high-k dielectrics

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dc.contributor.authorToledano Luque, Maria
dc.contributor.authorDegraeve, Robin
dc.contributor.authorZahid, Mohammed
dc.contributor.authorKaczer, Ben
dc.contributor.authorBlomme, Pieter
dc.contributor.authorKittl, Jorge
dc.contributor.authorJurczak, Gosia
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-19T19:43:06Z
dc.date.available2021-10-19T19:43:06Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19895
dc.source.beginpage631
dc.source.endpage640
dc.source.issue3
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume58
dc.title

Fast VTH transients after the program/erase of flash memory stacks with high-k dielectrics

dc.typeJournal article
dspace.entity.typePublication
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