Publication:

Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

Date

2022
Journal article
https://doi.org/10.1063/5.0097797
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dc.contributor.authorVohra, Anurag
dc.contributor.authorGeens, Karen
dc.contributor.authorZhao, Ming
dc.contributor.authorSyshchyk, Olga
dc.contributor.authorHahn, Herwig
dc.contributor.authorFahle, Dirk
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorWellekens, Dirk
dc.contributor.authorVanhove, Benjamin
dc.contributor.authorLanger, Robert
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorSyshchyk, Olga
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorVanhove, Benjamin
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecSyshchyk, Olga::0000-0001-8110-3754
dc.contributor.orcidimecWellekens, Dirk::0000-0003-4532-5784
dc.contributor.orcidimecVanhove, Benjamin::0009-0004-6290-5259
dc.date.accessioned2022-08-31T10:28:42Z
dc.date.available2022-07-10T02:26:50Z
dc.date.available2022-07-12T17:53:03Z
dc.date.available2022-07-15T10:11:37Z
dc.date.available2022-08-31T10:28:42Z
dc.date.embargo2023-06-28
dc.date.issued2022
dc.description.wosFundingTextThis project has received funding from the "Electronics Components and Systems for European Leadership" Joint Undertaking (ECSEL JU) under Grant Agreement No. 783174. The JU receives support from the European Union's Horizon 2020 research and innovation program from Austria, Spain, Belgium, Germany, Slovakia, Italy, Netherlands, and Slovenia.
dc.identifier.doi10.1063/5.0097797
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40104
dc.publisherAIP Publishing
dc.source.beginpage261902
dc.source.issue26
dc.source.journalAPPLIED PHYSICS LETTERS
dc.source.numberofpages7
dc.source.volume120
dc.subject.keywordsGAN
dc.subject.keywordsSILICON
dc.subject.keywordsCARBON
dc.title

Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

dc.typeJournal article
dspace.entity.typePublication
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