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Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate

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dc.contributor.authorVan Gasse, Kasper
dc.contributor.authorWang, Zhechao
dc.contributor.authorMoskalenko, V.
dc.contributor.authorLatkowski, S.
dc.contributor.authorKuyken, Bart
dc.contributor.authorBente, E.
dc.contributor.authorRoelkens, Gunther
dc.contributor.imecauthorVan Gasse, Kasper
dc.contributor.imecauthorKuyken, Bart
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.date.accessioned2021-10-23T16:05:42Z
dc.date.available2021-10-23T16:05:42Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27460
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7765711
dc.source.beginpageThB6
dc.source.conference25th International conference Semiconductor Laser Conference - ISLC
dc.source.conferencedate12/09/2016
dc.source.conferencelocationKobe Japan
dc.title

Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate

dc.typeProceedings paper
dspace.entity.typePublication
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