Publication:

Advantages of the FinFET architecture in SONOS and nanocrystal memory devices

Date

2007
Proceedings Paper
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dc.contributor.authorLombardo, S.
dc.contributor.authorGerardi, C.
dc.contributor.authorBreuil, Laurent
dc.contributor.authorJahan, C.
dc.contributor.authorPerniola, L.
dc.contributor.authorCina, G.
dc.contributor.authorCorso, D.
dc.contributor.authorTripiciano, E.
dc.contributor.authorAncarani, V.
dc.contributor.authorIannoccone, G.
dc.contributor.authorBongiorno, C.
dc.contributor.authorGarozzo, C.
dc.contributor.authorBarbera, P.
dc.contributor.authorNowak, E.
dc.contributor.authorPuglisi, R.
dc.contributor.authorCosta, G.A.
dc.contributor.authorCoccorese, C.
dc.contributor.authorVecchio, M.
dc.contributor.authorRimini, E.
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-16T17:36:39Z
dc.date.available2021-10-16T17:36:39Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12507
dc.source.beginpage921
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2007
dc.source.conferencelocationWashington, DC USA
dc.source.endpage924
dc.title

Advantages of the FinFET architecture in SONOS and nanocrystal memory devices

dc.typeProceedings paper
dspace.entity.typePublication
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