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Atom probe tomography for 3D-dopant analysis in FinFET devices

Date

2012
Proceedings Paper
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dc.contributor.authorKambham, Ajay Kumar
dc.contributor.authorZschaetzsch, Gerd
dc.contributor.authorSasaki, Yuichiro
dc.contributor.authorTogo, Mitsuhiro
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorMody, J.
dc.contributor.authorFlorakis, Antonios
dc.contributor.authorGajula, D.R.
dc.contributor.authorKumar, Arul
dc.contributor.authorGilbert, Matthieu
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-20T12:03:56Z
dc.date.available2021-10-20T12:03:56Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20899
dc.source.beginpage77
dc.source.conferenceSymposium on VLSI Technology - VLSIT
dc.source.conferencedate12/06/2012
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage78
dc.title

Atom probe tomography for 3D-dopant analysis in FinFET devices

dc.typeProceedings paper
dspace.entity.typePublication
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