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Influence of doping profile and halo implantation on the threshold voltage mismatch of a 0.13μm CMOS technology

Date

2002
Proceedings Paper
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dc.contributor.authorCroon, Jeroen
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorSansen, Willy
dc.contributor.authorMaes, Herman
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-14T21:18:10Z
dc.date.available2021-10-14T21:18:10Z
dc.date.embargo9999-12-31
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6155
dc.source.beginpage579
dc.source.conferenceESSDERC - 32nd European Solid-State Device Research Conference
dc.source.conferencedate24/09/2002
dc.source.conferencelocationFirenze Italy
dc.source.endpage582
dc.title

Influence of doping profile and halo implantation on the threshold voltage mismatch of a 0.13μm CMOS technology

dc.typeProceedings paper
dspace.entity.typePublication
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