Publication:

Source/drain materials for Ge nMOS devices

Date

2019
Meeting abstract
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dc.contributor.authorVohra, Anurag
dc.contributor.authorPorret, Clément
dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorCapogreco, Elena
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-27T23:01:22Z
dc.date.available2021-10-27T23:01:22Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34403
dc.source.beginpage38
dc.source.conference2nd Joint ISTDM / ICSI 2019 Conference
dc.source.conferencedate2/06/2019
dc.source.conferencelocationMadison, Wi USA
dc.source.endpage39
dc.title

Source/drain materials for Ge nMOS devices

dc.typeMeeting abstract
dspace.entity.typePublication
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