Publication:

CMOS-compatible GaN-based devices on 200mm-Si for RF applications: integration and performance

Date

2019-12
Proceedings Paper
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dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorAlian, AliReza
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorKhaled, Ahmad
dc.contributor.authorRodriguez, Raul
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorChang, Shane
dc.contributor.authorSimoen, Eddy
dc.contributor.authorZhao, Simeng Ellen
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorWambacq, Piet
dc.contributor.authorZhao, Ming
dc.contributor.authorParvais, Bertrand
dc.contributor.authorWaldron, Niamh
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorKhaled, Ahmad
dc.contributor.imecauthorRodriguez, Raul
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorWambacq, Piet
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecKhaled, Ahmad::0000-0003-2892-3176
dc.contributor.orcidimecRodriguez, Raul::0000-0002-4457-8942
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecWambacq, Piet::0000-0003-4388-7257
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-27T15:48:13Z
dc.date.available2021-10-27T15:48:13Z
dc.date.issued2019-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33772
dc.source.beginpage398
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedate7/12/2019
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage401
dc.title

CMOS-compatible GaN-based devices on 200mm-Si for RF applications: integration and performance

dc.typeProceedings paper
dspace.entity.typePublication
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