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Atomic layer deposition: nucleation and growth behavior of HfO2 dielectrics on semiconductor surfaces

Date

2009-06
Dissertation
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dc.contributor.authorNyns, Laura
dc.contributor.imecauthorNyns, Laura
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.thesisadvisorDe Gendt, Stefan
dc.contributor.thesisadvisorVinckier, Chris
dc.date.accessioned2021-10-18T01:12:45Z
dc.date.available2021-10-18T01:12:45Z
dc.date.embargo9999-12-31
dc.date.issued2009-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15933
dc.title

Atomic layer deposition: nucleation and growth behavior of HfO2 dielectrics on semiconductor surfaces

dc.typePHD thesis
dspace.entity.typePublication
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