Publication:

Hot-Electron-Induced Punch-Through (HEIP) Effect in p-MOSFET Enhanced by Mechanical Stress

Date

2021
Journal article
https://doi.org/10.1109/LED.2021.3104885
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dc.contributor.authorLee, Kookjin
dc.contributor.authorKaczer, Ben
dc.contributor.authorKruv, Anastasiia
dc.contributor.authorGonzalez, Mario
dc.contributor.authorDegraeve, Robin
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorGrill, Alexander
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.imecauthorLee, Kookjin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorKruv, Anastasiia
dc.contributor.imecauthorGonzalez, Mario
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorGrill, Alexander
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.orcidimecGrill, Alexander::0000-0003-1615-1033
dc.contributor.orcidimecLee, Kookjin::0000-0002-9896-1090
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.contributor.orcidimecGonzalez, Mario::0000-0003-4374-4854
dc.date.accessioned2022-07-01T08:43:05Z
dc.date.available2021-11-02T15:56:37Z
dc.date.available2022-06-24T10:25:02Z
dc.date.available2022-06-24T11:41:46Z
dc.date.available2022-07-01T08:43:05Z
dc.date.issued2021
dc.identifier.doi10.1109/LED.2021.3104885
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37530
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage1424
dc.source.endpage1427
dc.source.issue10
dc.source.journalIEEE ELECTRON DEVICE LETTERS
dc.source.numberofpages4
dc.source.volume42
dc.subject.keywordsIMPACT-IONIZATION
dc.subject.keywordsSTRAIN
dc.subject.keywordsCHANNEL
dc.subject.keywordsDEGRADATION
dc.title

Hot-Electron-Induced Punch-Through (HEIP) Effect in p-MOSFET Enhanced by Mechanical Stress

dc.typeJournal article
dspace.entity.typePublication
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