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New method for accurate determination of the electric-field enhancement in junctions - theoretical model and application to STI diodes with high fields

Date

2002
Proceedings Paper
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dc.contributor.authorCzerwinski, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorPoyai, Amporn
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-14T21:19:16Z
dc.date.available2021-10-14T21:19:16Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6166
dc.source.beginpage278
dc.source.conferenceHigh Purity Silicon VII
dc.source.conferencedate20/10/2002
dc.source.conferencelocationSalt Lake City, UT USA
dc.source.endpage289
dc.title

New method for accurate determination of the electric-field enhancement in junctions - theoretical model and application to STI diodes with high fields

dc.typeProceedings paper
dspace.entity.typePublication
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