Publication:

Silicide induced mechanical stress in Si: what are the consequences for MOS technology

Date

2000
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorMaex, Karen
dc.contributor.authorSteegen, An
dc.contributor.imecauthorMaex, Karen
dc.date.accessioned2021-10-14T13:19:00Z
dc.date.available2021-10-14T13:19:00Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4553
dc.source.beginpage143
dc.source.conferenceThin Films - Stresses and Mechanical Properties VIII
dc.source.conferencedate29/11/1999
dc.source.conferencelocationBoston, MA USA
dc.source.endpage149
dc.title

Silicide induced mechanical stress in Si: what are the consequences for MOS technology

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
4550.pdf
Size:
2.15 MB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions