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Conference contributions
Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs
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Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs
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Date
2014-10
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Rosseel, Erik
;
Profijt, Harald
;
Hikavyy, Andriy
;
Tolle, John
;
Kubicek, Stefan
;
Mannaert, Geert
;
L'abbe, Caroline
;
Wostyn, Kurt
;
Horiguchi, Naoto
;
Clarysse, Trudo
;
Parmentier, Brigitte
;
Dhayalan, Sathish Kumar
;
Bender, Hugo
;
Maes, Jan Willem
;
Loo, Roger
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2017
since deposited on 2021-10-22
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Acq. date: 2025-12-11
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Metrics
Views
2017
since deposited on 2021-10-22
1
last month
Acq. date: 2025-12-11
Citations