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A functional 41-stage ring oscillator using scaled FinFET devices with 25nm gate lengths and 10nm Fin widths applicable for the 45nm CMOS node

Date

2004-08
Journal article
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dc.contributor.authorCollaert, Nadine
dc.contributor.authorDixit, Abhisek
dc.contributor.authorGoodwin, Michael
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorRooyackers, Rita
dc.contributor.authorDegroote, Bart
dc.contributor.authorLeunissen, Peter
dc.contributor.authorVeloso, Anabela
dc.contributor.authorJonckheere, Rik
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.date.accessioned2021-10-15T12:54:54Z
dc.date.available2021-10-15T12:54:54Z
dc.date.issued2004-08
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8706
dc.source.beginpage568
dc.source.endpage570
dc.source.issue8
dc.source.journalIEEE Electron Device Letters
dc.source.volume25
dc.title

A functional 41-stage ring oscillator using scaled FinFET devices with 25nm gate lengths and 10nm Fin widths applicable for the 45nm CMOS node

dc.typeJournal article
dspace.entity.typePublication
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