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Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities

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dc.contributor.authorDavid, Marie-Laure
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorNeimash, V.
dc.contributor.authorKras'ko, M.
dc.contributor.authorKraitchinskii, A.
dc.contributor.authorVoytovych, V.
dc.contributor.authorKabaldin, A.
dc.contributor.authorBarbot, J.F.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-16T01:06:09Z
dc.date.available2021-10-16T01:06:09Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10287
dc.source.beginpageS2255
dc.source.endpageS2266
dc.source.issue22
dc.source.journalJournal of Physics: Condensed Matter
dc.source.volume17
dc.title

Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities

dc.typeJournal article
dspace.entity.typePublication
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