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1.3 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding
Publication:
1.3 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding
Date
2018-07
Journal article
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39383.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Uvin, Sarah
;
Kumari, Sulakshna
;
De Groote, Andreas
;
Verstuyft, Steven
;
Lepage, Guy
;
Verheyen, Peter
;
Van Campenhout, Joris
;
Morthier, Geert
;
Van Thourhout, Dries
;
Roelkens, Gunther
Journal
Optics Express
Abstract
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1
since deposited on 2021-10-26
Acq. date: 2025-10-23
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2117
since deposited on 2021-10-26
Acq. date: 2025-10-23
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Metrics
Downloads
1
since deposited on 2021-10-26
Acq. date: 2025-10-23
Views
2117
since deposited on 2021-10-26
Acq. date: 2025-10-23
Citations