Publication:

Semi-analytical model for electrically injected GaAs nano-ridge laser diodes monolithically integrated on silicon

Date

2025
Journal article
https://doi.org/10.1364/OE.543613
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dc.contributor.authorYimam, Andualem
dc.contributor.authorColucci, Davide
dc.contributor.authorCaer, Charles
dc.contributor.authorYudistira, Didit
dc.contributor.authorDe Koninck, Yannick
dc.contributor.authorSar, Huseyin
dc.contributor.authorBaryshnikova, Marina
dc.contributor.authorVerheyen, Peter
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorKunert, Bernardette
dc.contributor.authorMorthier, Geert
dc.contributor.authorVan Thourhout, Dries
dc.contributor.imecauthorYimam, Andualem ali
dc.contributor.imecauthorColucci, Davide
dc.contributor.imecauthorCaer, Charles
dc.contributor.imecauthorYudistira, Didit
dc.contributor.imecauthorDE Koninck, Yannick
dc.contributor.imecauthorSar, Huseyin
dc.contributor.imecauthorBaryshnikova, Marina
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorVAN Campenhout, Joris
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorMorthier, Geert
dc.contributor.imecauthorVAN Thourhout, Dries
dc.contributor.orcidimecColucci, Davide::0000-0001-9845-8965
dc.contributor.orcidimecCaer, Charles::0000-0002-2735-2423
dc.contributor.orcidimecYudistira, Didit::0000-0003-1440-5407
dc.contributor.orcidimecSar, Huseyin::0000-0002-4993-1258
dc.contributor.orcidimecBaryshnikova, Marina::0000-0002-5945-4459
dc.contributor.orcidimecVerheyen, Peter::0000-0002-8245-9442
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecMorthier, Geert::0000-0003-1819-6489
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.date.accessioned2025-02-16T21:12:50Z
dc.date.available2025-02-16T21:12:50Z
dc.date.issued2025
dc.description.abstractWe present a semi-analytical model that can accurately explain the working principle behind the recently reported electrically injected In0.2Ga0.8As/GaAs monolithic nano-ridge lasers and more importantly show how the model can be used to study the effect of device parameters on the spectral behavior, the slope efficiency and the threshold gain. We show that mode beating between the fundamental mode and a higher order mode is fundamental in the operation of these lasers. Analytical expressions for codirectional mode coupling are used in developing the round-trip laser model. Results from analytical expressions are verified by comparisons with simulations and the model is supported later by measurement results.
dc.description.wosFundingTextH2020 Excellent Science (884963)
dc.identifier.doi10.1364/OE.543613
dc.identifier.issn1094-4087
dc.identifier.pmidMEDLINE:39876367
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45225
dc.publisherOptica Publishing Group
dc.source.beginpage2101
dc.source.endpage2114
dc.source.issue2
dc.source.journalOPTICS EXPRESS
dc.source.numberofpages14
dc.source.volume33
dc.subject.keywordsSI
dc.title

Semi-analytical model for electrically injected GaAs nano-ridge laser diodes monolithically integrated on silicon

dc.typeJournal article
dspace.entity.typePublication
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