Publication:

ESD protection diodes in bulk Si gate-all- around vertically stacked horizontal nanowire technology

Date

2019
Journal article
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dc.contributor.authorChen, Shih-Hung
dc.contributor.authorHellings, Geert
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMertens, Hans
dc.contributor.authorMocuta, Anda
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-27T07:59:36Z
dc.date.available2021-10-27T07:59:36Z
dc.date.issued2019
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32694
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8576641
dc.source.beginpage112
dc.source.endpage119
dc.source.issue1
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.volume19
dc.title

ESD protection diodes in bulk Si gate-all- around vertically stacked horizontal nanowire technology

dc.typeJournal article
dspace.entity.typePublication
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