Publication:

Selective area MOVPE growth of GaAs-based III-V material on 300mm silicon for electronic and photonic applications

Date

2015
Meeting abstract
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dc.contributor.authorGuo, Weiming
dc.contributor.authorMols, Yves
dc.contributor.authorLanger, Robert
dc.contributor.authorBarla, Kathy
dc.contributor.authorCaymax, Matty
dc.contributor.authorKunert, Bernardette
dc.contributor.authorDate, Lucien
dc.contributor.authorBao, Xinyu
dc.contributor.authorCarlson, David
dc.contributor.authorSanchez, Errol
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorDate, Lucien
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.date.accessioned2021-10-22T19:33:04Z
dc.date.available2021-10-22T19:33:04Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25347
dc.source.conferenceE-MRS Fall Meeting
dc.source.conferencedate15/09/2015
dc.source.conferencelocationWarsaw Poland
dc.title

Selective area MOVPE growth of GaAs-based III-V material on 300mm silicon for electronic and photonic applications

dc.typeMeeting abstract
dspace.entity.typePublication
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