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Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

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dc.contributor.authorVantomme, Andre
dc.contributor.authorWu, Ming Fang
dc.contributor.authorHogg, S.
dc.contributor.authorLangouche, G.
dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorWhite, M. E.
dc.contributor.authorO'Donnell, K. P.
dc.contributor.authorNistor, Leona
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorBender, Hugo
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorBender, Hugo
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.accessioned2021-10-14T14:12:00Z
dc.date.available2021-10-14T14:12:00Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4900
dc.source.beginpageW11.38.1
dc.source.conferenceGaN and Related Alloys - 1999
dc.source.conferencedate29/11/1999
dc.source.conferencelocationBoston, MA USA
dc.title

Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

dc.typeProceedings paper
dspace.entity.typePublication
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