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On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects
Publication:
On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects
Date
2016
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kaczer, Ben
;
Amoroso, S. M.
;
Hussin, R.
;
Asenov, A.
;
Franco, Jacopo
;
Weckx, Pieter
;
Roussel, Philippe
;
Grasser, T.
;
Rzepa, G.
;
Horiguchi, Naoto
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1919
since deposited on 2021-10-23
Acq. date: 2025-10-23
Citations
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Views
1919
since deposited on 2021-10-23
Acq. date: 2025-10-23
Citations