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Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems

Date

2010
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dc.contributor.authorNishimura, Tsuyoshi
dc.contributor.authorShimura, Yosuke
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorVincent, Benjamin
dc.contributor.authorVantomme, Andre
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorNakatsuka, Osaku
dc.contributor.authorZaima, Shigeaki
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-18T19:37:11Z
dc.date.available2021-10-18T19:37:11Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17701
dc.source.conferenceWorkshop: GeSn Developments and Future Applications
dc.source.conferencedate28/05/2010
dc.source.conferencelocationLeuven Belgium
dc.title

Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems

dc.typeOral presentation
dspace.entity.typePublication
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