Publication:

Dislocations in GaN/sapphire films: their distribution and effect on stress and optical properties

Date

1998
Proceedings Paper
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dc.contributor.authorJain, Suresh
dc.contributor.authorPinardi, Kuntjoro
dc.contributor.authorMaes, Herman
dc.contributor.authorVan Overstraeten, Roger
dc.contributor.authorWillander, M.
dc.contributor.authorAtkinson, A.
dc.date.accessioned2021-09-30T12:16:08Z
dc.date.available2021-09-30T12:16:08Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2650
dc.source.beginpage875
dc.source.conferenceNitride Semiconductors
dc.source.conferencedate1/12/1997
dc.source.conferencelocationBoston, MA USA
dc.source.endpage880
dc.title

Dislocations in GaN/sapphire films: their distribution and effect on stress and optical properties

dc.typeProceedings paper
dspace.entity.typePublication
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