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Conference contributions
Growth of high Ge content SiGe layers for high performance buried channel PMOSFET devices
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Growth of high Ge content SiGe layers for high performance buried channel PMOSFET devices
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Date
2010-05
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hikavyy, Andriy
;
Witters, Liesbeth
;
Brus, Stephan
;
Hoffmann, Thomas Y.
;
Loo, Roger
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1843
since deposited on 2021-10-18
Acq. date: 2025-12-15
Citations
Metrics
Views
1843
since deposited on 2021-10-18
Acq. date: 2025-12-15
Citations