Publication:

Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits

Date

2020
Journal article
https://doi.org/10.1038/s41566-020-0647-4
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dc.contributor.authorMaiti, R.
dc.contributor.authorSaadi, M.A.S.R.
dc.contributor.authorXie, T.
dc.contributor.authorAzadani, J.G.
dc.contributor.authorUluutku, B.
dc.contributor.authorAmin, R.
dc.contributor.authorBriggs, A.F.
dc.contributor.authorMiscuglio, M.
dc.contributor.authorVan Thourhout, Dries
dc.contributor.authorSolares, S.D.
dc.contributor.authorLow, T.
dc.contributor.authorAgarwal, R.
dc.contributor.authorBank, S.R.
dc.contributor.authorSorger, V.J.
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.date.accessioned2021-10-29T00:24:47Z
dc.date.available2021-10-29T00:24:47Z
dc.date.embargo9999-12-31
dc.date.issued2020
dc.identifier.doi10.1038/s41566-020-0647-4
dc.identifier.issn1749-4885
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35533
dc.source.beginpage578
dc.source.endpage584
dc.source.journalNature Photonics
dc.source.volume14
dc.title

Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits

dc.typeJournal article
dspace.entity.typePublication
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